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标题: NAND Flash Memory Progrmming failed(Bad Blocks) [打印本页]

作者: wolfdol 时间: 2021-5-23 20:10 标题: NAND Flash Memory Progrmming failed(Bad Blocks)

hi~
Windows10 64-bit is being used.
Nand flash memory recently purchased a 'TL866II Plus' and for writing.
Attempts to write Nand Flash Memory all day were unsuccessful.
Find the cause of Nand Flash Memory know about the 'Bad Block' of information.
('Bad Block' is not a poor frequently exists, but ic)
Reading is well read, but 'Programming failed' occurs because data is written to 'Bad Block' while writing.
'Bad Block' handling mode is required for 'TL866II Plus' program.
Need's the ... devices 'Bad Block' the programs that do not use data
For example, 'Skip Bad Block' features like a horse.
Answer we'd appreciate it.Nand Flash Memory : Samsung K9F1G08U0C, K9F2G08U0C and many more.

作者: admin 时间: 2021-5-24 09:22

回复 1# wolfdol

In general, bad block skipping must use partition write mode. LINUX system uses multiple partitions for bad block management. The size and location of the partitions are customized by the developer. So it must be set manually. Generally only suitable for new product development or mass production programming.

The bad block processing method is set in the config options.

For maintenance, The data is read from IC. only hard copy can be performed generally.

作者: wolfdol 时间: 2021-5-24 09:56

[flash]https://www.alldatasheet.co.kr/datasheet-pdf/pdf_kor/519009/SAMSUNG/K9F1G08U0C-PCB0T00.html[/flash]

If you look at page 19 above, it says 'Include Bad Block', but can't Samsung NAND flash memory use the program?
I bought it because I heard it supports NAND flash memory.
I tried it today, but there must be more than one bad block, so I fail.
Please teach me the way.~~
Did you buy the wrong product?

作者: admin 时间: 2021-5-24 15:06

回复 3# wolfdol
Unable to browse the picture or video
I don't see anything, I can not understand what you said.

作者: wolfdol 时间: 2021-5-24 18:03

Currently, the NAND flash memory is well read,but there is an error in writing.
The memory to be used is Samsung K9F1G08U0C-PCB0, K9F2G08U0C-PCB0, etc.
They all have at least one bad block, so I tried to write it, but it failed.
Please tell me how to be successful~~

作者: wolfdol 时间: 2021-5-25 15:51

https://www.youtube.com/watch?v=9DngDjI0KNU
I hope you understand after watching the YouTube video above.

Answers I'll wait.

作者: admin 时间: 2021-5-26 08:44

回复 6# wolfdol
Can't visit the youtube in China

作者: wolfdol 时间: 2021-5-26 13:10

Please respond to the comments above.
And finally, we will contact you.
It is necessary to add an algorithm for the 'Skip bad block' function as in the 'T56'
Do you have an update plan?

作者: admin 时间: 2021-5-27 09:30

回复 8# wolfdol
Do you read the T56/TL866II user guide about NAND?
All skip bad block function is complete.

set in config <options>:
This is an example configuration actually used

my Email:532007590@QQ.com

图片附件: 阿里旺旺图片20210527095110.jpg (2021-5-27 09:39, 142.75 KB) / 下载次数 22015
http://forums.xgecu.com/attachment.php?aid=617&k=eabf482f1055d1b742c0447037b0f977&t=1739747005&sid=WzI02i

作者: wolfdol 时间: 2021-5-27 09:45

TL866II Plus does not have the same option as it, so I am telling you that NAND flash memory write support is not available.
Do you have plans for an update?

It's not a difficult question, but I don't know if you're not giving the correct answer.

作者: admin 时间: 2021-5-27 09:51

回复 10# wolfdol

T56/TL866II is the same. this is new versions, Will be released these days.old version is only 8 partitions.But the method of use is the same

作者: admin 时间: 2021-5-27 09:53

so I am telling you that NAND flash memory write s ...
wolfdol 发表于 2021-5-27 09:45

???

作者: admin 时间: 2021-5-27 09:56

TL866II Plus does not have the same option as it, so I am telling you that NAND flash memory write s ...
wolfdol 发表于 2021-5-27 09:45

I can't understand, what is the problem you said?Isn't it a question of skipping bad blocks?
1. use skipping must program by partitions.
2. otherwise you only use a chip without bad blocks. or test more chips (if it is blank data on bad block, it can be programmed )

作者: q519948746 时间: 2021-5-27 12:06

回复 11# admin

建议新版本不要限制分区数，可以让用户自定义增加分区数，在分区信息编辑完成后校验自定义的分区大小信息是否符合芯片大小即可

作者: admin 时间: 2021-5-27 12:34

回复 14# q519948746
最多钩选16个一般够用了吧？检查分区设置是否正确，是有的

作者: q519948746 时间: 2021-5-27 15:12

回复 15# admin

16个分区确实可以应用大部分场景，但是自定义分区数个人认为逻辑上不难实现，软件组件上用CreateWindowEx 配合其他api 复制一下组件，毕竟实现起来应该没有什么难度但是可以作为本产品的一个卖点，其他等价产品似乎并不支持nand分区管理

作者: q519948746 时间: 2021-6-2 11:10

回复 15# admin

对于我们折腾光猫的，16个分区好像还真不够用。。。。

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作者: admin 时间: 2021-6-2 16:48

回复 17# q519948746

好的，当时觉得这个窗口太长。所以没有搞哪么多
新版本V11.00,最大到31个，
并且显示每个分区的开始地址，让设置更直观

图片附件: 阿里旺旺图片20210603132044.jpg (2021-6-3 14:13, 131.72 KB) / 下载次数 21847
http://forums.xgecu.com/attachment.php?aid=644&k=fd8445d72be7259c9efe79fcadb0cfa0&t=1739747005&sid=WzI02i

作者: q519948746 时间: 2021-6-4 20:11

回复 18# admin

感谢为新版本做出的努力，在多文件分区模式时为16个分区，个人建议如果组件不好排版建议考虑使用SysTabControl32 进行排版另提一个小建议，在分区模式的 ST_BLK END_BLK CNT_BLK 这些Edit文本框中使用TAB键切换焦点时是纵向切换的，按照使用习惯建议改一下焦点顺序 ST_BLK内按下TAB切换到END_BLK,然后CNT_BLK

作者: admin 时间: 2021-6-5 10:01

回复 19# q519948746

这个TAB顺序，当时没有想到，有时间来改，切换根据控件的ID顺序来的，为了处理消息统一，ID的竖向排的，怕改乱了，暂时不改了。

多文件时，以后如果真的有人发现不够用，再来改，现在只是后面15个文件名不可见。
临时使用方案：
在单文件界面，勾选17-31，后切换到多文件界面，后面分区的文件名及路径使用默认设置Part_xx.bin

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